Semiconductor Science and Technology · 1987 · 75 citations · 12 references
Natural SciencesMaterials EngineeringMaterials ScienceOptical MaterialsSemiconductor MaterialsSpectroscopyInorganic SpectroscopyLuminescent MaterialsOptical Properties Of SemiconductorsOptical SpectroscopySemiconductor Device MaterialsSilicon MaterialsDispersive SpectroscopyExcitationFourier TransformPhotoluminescencePhotoluminescence SpectroscopySemiconductor CharacterizationSilicon CharacterizationSilicon Optical Properties
Calibrations are reported for measuring boron, phosphorus and aluminium concentrations in silicon by comparing the intensities of bound-exciton and free-exciton luminescence features. Particular attention has been directed towards investigating the effects of excitation density and instrumental resolution. The luminescence spectra have been corrected for the system response so that the calibrations are independent of the equipment used and are hence transferable. Fourier transform rather than dispersive spectroscopy has been employed to measure the luminescence spectra. Since Fourier transform photoluminescence spectroscopy is a relatively new technique, it is described in some detail.
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Resistivity Measurements on Germanium for Transistors
L. B. Valdes · Proceedings of the IRE · 1954 · 661 citations
A new determination of the emissivity of tungsten ribbon
J.C. De Vos · Physica · 1954 · 479 citations