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Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits

Electrical EngineeringEngineeringPhysicsNanoelectronicsElectronic EngineeringBias Temperature InstabilityApplied PhysicsTunnel FetElectronic CircuitLogic CircuitsMicroelectronicsSemiconductor DeviceSi/ge Nanowire Fet