Correlation between Device Performance and Defects in GaInN-Based Solar Cells

Abstract

We investigated the correlation between the device performance and defects, such as V-shaped pits and threading dislocations, in GaInN-based solar cells. To realize high-performance GaInN-based solar cells with a high open-circuit voltage and fill factor, it is essential to realize a low pit density of less than 107 cm-2. In this study, we were unable to observe clear evidence of any effect of the threading dislocation density in the GaN underlying layer.