Applied Physics Letters · 1977 · 44 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDefects In Electronic MaterialsDislocations In SemiconductorsSemiconductor DefectsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsDislocation DynamicsDislocation GlideDislocation MotionDislocation NetworksDislocation PropagationDislocationsDouble HeterostructuresHeterostructure Lasers
The 〈100〉 dark-line defects (DLD’s) in the degraded (GaAl)As-GaAs double-heterostructure lasers are studied by transmission electron microscopy. Two types of 〈110〉 DLD’s are observed; one is associated with 〈110〉 straight dislocations and the other with dislocation networks developing from the mirror surface. The former type of the 〈110〉 DLD’s is found to be formed by dislocation glide motion. The development of the 〈100〉 dislocation dipole from the 〈110〉 dislocation is also observed, indicating that the 〈110〉 dislocation is a source of the 〈100〉 dislocation dipole.
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Degradation of CW GaAs double-heterojunction lasers at 300 K
B.C. De Loach, B.W. Hakki, R. L. Hartman et al. · Proceedings of the IEEE · 1973 · 158 citations
Defect structure of degraded heterojunction GaAlAs−GaAs lasers
P. W. Hutchinson, P. S. Dobson, Shunji Ohara et al. · Applied Physics Letters · 1975 · 105 citations