Arbitrary substrate voltage wave forms for manipulating energy distribution of bombarding ions during plasma processing

Abstract

The energy distribution of ions (IED) bombarding a substrate during plasma etching has demonstrated effects on etch selectivity for integrated circuit fabrication. Accurate control of the IED is desired to better understand the nature of plasma–surface interaction and to control process outcomes. IED control can be achieved by tailoring the wave form shape of an rf bias applied to the substrate, using a programmable wave form generator in combination with a power amplifier. Due to the frequency dependence of the amplifier gain and the impedance of the plasma in contact with the substrate, it is not practical to predict the shape of the input wave form needed to produce a desired result at the substrate. Introduced here is an iterative approach using feedback control in the frequency domain to produce arbitrary wave form shapes at the substrate. A fast Fourier transform (FFT) of the substrate wave form is compared, one frequency at a time, with the FFT of a desired target wave form, to determine adjustments needed at the generator. This iterative procedure, which is fully automated and tested for several target wave form shapes, is repeated until the substrate wave form converges to the targeted shape.