Photon Antibunching Observed from an InAlAs Single Quantum Dot

Abstract

Single-photon emitters and detectors are key devices to realize secure communications with single-photon-based quantum cryptography and single-photon-based quantum computing. InAlAs quantum dots (QDs) cover the wavelength range with high quantum efficiencies of Si-based single-photon detectors. Clear photon antibunching was observed from an InAlAs single QD under weak excitations. To realize single-photon emitters on demand, complete population of the QD energy states before the photon emission events is necessary, but the measured antibunching properties were dependent substantially on the photo-excitation powers. The physical origin of this problem is discussed. The criterion to distinguish the real deviation from the photon antibunching condition and the artifact of the measurements is clarified. The capability of single-photon emissions on demand will be demonstrated with photon antibunching under pulsed operations.