Reduced drain current variability in fully depleted silicon-on-thin-BOX (SOTB) MOSFETs

Abstract

Drain current variability in silicon-on-thin-BOX (SOTB) MOSFETs are analyzed by decomposing into current variability components and compared with conventional bulk MOSFETs. It is found that drain current variability in SOTB MOSFETs is largely suppressed thanks to not only reduced VTH variability but also reduced current-onset voltage (COV) variability due to intrinsic channel.