Classical Conditioning Mimicked in Junctionless IZO Electric-Double-Layer Thin-Film Transistors

Abstract

Classical conditioning, a fundamental property in associative learning, has aroused a wide range of interests in neuromorphic engineering. Here, junctionless indium-zinc-oxide (IZO)-based electric-double-layer transistors gated by nanogranular SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> proton conducting electrolyte films are proposed to mimic such behavior. Proton-related electrochemical doping can result in evident oxygen vacancy in IZO channel layer, which is demonstrated by X-ray photoelectron spectroscopy measurements. After such electrochemical forming in half part of the IZO channel, conditioning response can be observed by gate-pulse training process.