Applied Physics Letters · 2012 · 101 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesThin FilmsPhotovoltaic DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor Thin FilmsSolar Cell MaterialsSolar CellsBulk Heterojunction Solar CellsElectrical PropertiesHeterojunction Solar CellsSolar Cell FabricationSpallingTandem Solar CellsThin-film SemiconductorsThin-film Solar Cells
In this letter, we demonstrate the effectiveness of the controlled spalling technology for producing high-efficiency (28.7%) thin-film InGaP/(In)GaAs/Ge tandem solar cells. The controlled spalling technique was employed to separate the as-grown solar cell structure from the host Ge wafer followed by its transfer to an arbitrary Si support substrate. The structural and electrical properties of the thin-film tandem cells were examined and compared against those on the original bulk Ge substrate. The comparison of the electrical data suggests the equivalency in cell parameters for both the thin-film (spalled) and bulk (non-spalled) cells, confirming that the controlled spalling technology does maintain the integrity of all layers in such an elaborate solar cell structure.
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26.1% thin-film GaAs solar cell using epitaxial lift-off
G.J. Bauhuis, P. Mulder, E.J. Haverkamp et al. · Solar Energy Materials and Solar Cells · 2009 · 315 citations · Full text
Epitaxial Lift‐Off for large area thin film III/V devices
J.J. Schermer, P. Mulder, G.J. Bauhuis et al. · physica status solidi (a) · 2005 · 118 citations · Full text