Europhysics Letters (EPL) · 2012 · 13 citations · 17 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsElectronic Band StructureSemiconductor PhysicsStrongly Correlated Electron SystemsWide-bandgap SemiconductorsBand Gap EnergyDoped SemiconductorsFermi LevelImpuritiesImpurity StatesLocalized StatesQuasi-fermi LevelsValence Band
We report on the observation of semiconductor local electron states linked to the quasi-Fermi level and, consequently, not characterized by the defined position in the energy spectrum which is familiar for shallow and deep impurities. This type of local electron states have been found in the doped narrow-gap semiconductor Pb1-xSnxTe(In). The binding energy of these states is less than 10meV providing photoresponse at the wavelengths exceeding 100 mu m. Copyright (C) EPLA, 2012
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