Dielectric Conduction Mechanisms of Advanced Interconnects: Evidence for Thermally- Induced 3D /2 D Transition

Abstract

Electrical, electro-optical, mechanical and microstructural characterizations explain why the leakage currents in advanced Cu/ultra-low K interconnects can change from bulk (3D) to mostly interfacial (2D) above 150degC. A physical model consistent with all these results is proposed