Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process

Extreme selectivity in the lift-off of epitaxial GaAs films

Eli Yablonovitch, T.J. Gmitter, J. P. Harbison et al. · Applied Physics Letters · 1987 · 806 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates

Eli Yablonovitch, D. M. Hwang, T.J. Gmitter et al. · Applied Physics Letters · 1990 · 405 citations

Natural Sciences, Materials Engineering, Materials Science +17

High efficiency GaAs thin film solar cells by peeled film technology

Makoto Konagai, Mitsunori Sugimoto, Kiyoshi Takahashi · Journal of Crystal Growth · 1978 · 311 citations

Engineering, Electrical Engineering, Materials Science +12

Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bond

Eli Yablonovitch, T. Sands, D. M. Hwang et al. · Applied Physics Letters · 1991 · 96 citations

Engineering, Materials Engineering, Materials Science +17

High rate epitaxial lift-off of InGaP films from GaAs substrates

J.J. Schermer, G.J. Bauhuis, P. Mulder et al. · Applied Physics Letters · 2000 · 83 citations · Full text

Engineering, Materials Engineering, Materials Science +14