Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design - Concepedia

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Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design

10

Citations

5

References

2011

Year

Sudip Ghosh, B. Grandchamp, G. A. Koné, Cristell Maneux, T. Zimmer, Virginie Nodjiadjim, M. Riet, J.-Y. Dupuy, J. Godin

Microelectronics Reliability

Electrical EngineeringBias Stress ConditionsEngineeringRf SemiconductorCircuit DesignBias Temperature InstabilityApplied PhysicsInp/ingaas DhbtCircuit ReliabilityElectronic PackagingDevice ReliabilityMicroelectronicsSemiconductor Device

References

	Year	Citations

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