Auger recombination in bulk and quantum well InGaAs

Abstract

We report the determination of Auger recombination coefficients in bulk and quantum well InGaAs by time-resolved luminescence measurements. In bulk InGaAs the coefficient is C=3.2×10−28 cm6/s and has the temperature dependence of the valence-band Auger effect involving the split-off valence band. In 11 nm quantum well InGaAs we find C=0.9×10−28 cm6/s, independent of temperature. The Auger coefficient decreases slightly with decreasing well width.