Physical Review Letters · 1996 · 16 citations · 17 references
Natural SciencesMaterials ScienceCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsDopingElectronic Band StructureOptoelectronic MaterialsRare-earth-doped MaterialsSemiconductor DefectsWide Band Gap SemiconductorsBand GapLevelsPhotoluminescenceVacancy ComplexesVacancy-impurity Complexes
Photoluminescence is measured in n-type ZnSe doped with Ga and Cl under pressures to 100 kbar (at 7 K). For each dopant, the rate of pressure shift of the self-activated band changes at 25--30 kbar from faster than to slower than that of the band gap. The change is evidence that a previously unknown deep donorlike state emerges from the electron continuum. This state probably is related to zinc vacancy-donor complexes, whose levels move lower in the gap with compression.
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M. A. Haase, Jun Qiu, J. M. DePuydt et al. · Applied Physics Letters · 1991 · 1.6K citations
Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors
D. J. Chadi · Physical Review Letters · 1994 · 213 citations