GaAs Injection Laser with Novel Mode Control and Switching Properties

Abstract

The effects of nonuniform current densities on the properties of GaAs injection lasers are investigated. The structure studied is an injection laser with a channel etched on the p side of the junction parallel to the reflecting ends. It is found that the threshold current is higher for nonuniform currents than for uniform currents. The mode in which the laser oscillates depends on the distribution of current. A simple model of the transition and the energy vs density of states for the semiconductor is presented to explain these effects. Bistable operation of the structure has been observed.