Publication | Closed Access
A study of ion energy and its effects upon an SEGR-hardened stripe-cell MOSFET technology [space-based systems]
29
Citations
16
References
2001
Year
Device ModelingElectrical EngineeringIon ImplantationEngineeringStress-induced Leakage CurrentElectronic EngineeringBias Temperature InstabilityApplied PhysicsPenetration DepthIon Beam EnergyCircuit ReliabilityStripe-cell MosfetMicroelectronicsIon EnergySemiconductor Device
Experimental observations of an improved single-event gate rupture (SEGR) hardened stripe-cell MOSFET demonstrated that ion beam energy, penetration depth, and strike angle (tilt angle) have a significant influence upon the measured SEGR failure threshold voltage.
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