Silicon-on-insulator material formed by oxygen implantation and high-temperature annealing: Carrier transport, oxygen activity, and interface properties

Abstract

The crucial roles of high-temperature annealing (1300–1340 °C) and ambient gas are emphasized by the electrical properties of structure fabricated on silicon-on-insulator by deep oxygen implantation. Hall-effect measurements down to 77 K, as well as the characteristics of front channel and back channel transistors, show that the silicon overlay is quasihomogeneous, as a consequence of drastic improvement of the buried interface region. This is illustrated by the high carrier mobilities (1250 cm2 V−1 s−1 for electrons at 300 K), the dominance of acoustic phonon scattering, and the interface parameters that are more favorable than after low-temperature anneals and similar to those of bulk Si. The properties and the temperature behavior of oxygen-related donors are also investigated via the Hall effect. About 1015 cm−3 thermal donors are generated around 450–550 °C, while 1017 cm−3 new donors are formed at 750 °C. New donors presumably originate from the interface states of SiOx precipitates.