Applied Physics Letters · 1999 · 53 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesLaser DiodesLaser PhysicsSemiconductor LasersHigh-power Laser DiodesHigh-power LasersHigh-power Semiconductor LasersInternal Quantum EfficiencyMolecular Beam EpitaxyPower Conversion EfficiencyQuantum EfficiencySemiconductor Laser Diodes
808 nm lasers grown by molecular beam epitaxy show extremely high internal quantum efficiency and low internal loss, which results in very high slope efficiency at a long cavity length, and consequently, extremely high total power conversion efficiency at high continuous-wave power output.
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66% CW wallplug efficiency from Al-free 0.98 µm-emittingdiode lasers
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