J.C. Dries

High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy

M.R. Gokhale, J.C. Dries, P. Studenkov et al. · IEEE Journal of Quantum Electronics · 1997 · 69 citations

Wide-bandgap Semiconductor, Photonics, Engineering +15

Optimization of 10-Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes

Ran Wei, J.C. Dries, Hongsheng Wang et al. · IEEE Photonics Technology Letters · 2002 · 30 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Strain compensated In1−xGaxAs(x<0.47) quantum well photodiodes for extended wavelength operation

J.C. Dries, M.R. Gokhale, K.J. Thomson et al. · Applied Physics Letters · 1998 · 21 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +19

InGaAs/InP focal plane arrays for visible light imaging

Tara J. Martin, Marshall J. Cohen, J.C. Dries et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2004 · 19 citations

A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells

J.C. Dries, M.R. Gokhale, Stephen R. Forrest · Applied Physics Letters · 1999 · 18 citations

Semiconductors, Photonics, Electrical Engineering +13