Vapor Phase Epitaxy of GaAs by Direct Reduction of GaCl₃ with AsH₃/H₂

Abstract

GaAs was epitaxially grown at 500–600°C by direct reduction GaCl 3 with AsH 3 /H 2 . The GaCl 3 in a stainless steel evaporator was maintained at about 85°C, and supplied by He carrier gas. The AsH 3 diluted with H 2 was supplied in a separate line directly to the deposition zone. The growth rate was about 5–10 µm/hr for GaCl 3 of 5.5×10 -5 mol/min and V/III ratio of 5. The carrier concentrations of the grown layers were 10 15 to 10 16 cm -3 , and the maximum mobility obtained was 10000 cm 2 /V ·s at 77 K. These results indicate the possibility of a new growth method of III–V compounds.