Journal of Physics Condensed Matter · 2005 · 15 citations · 21 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsOptoelectronicsChemical Vapor DepositionDefects In Electronic MaterialsLuminescent MaterialsOptical Properties Of SemiconductorsOptical Properties Of SolidsSemiconductor DefectsBand Emission SpectraDefect ClustersDefect-related LuminescenceDislocation LinesEmission Spectra AnalysisNear-field Optical MicroscopyPhotoluminescencePhotoluminescence Spectroscopy
In a certain growth mode, V pits have been observed in AlyInxGa1−x−yN grown by metal–organic chemical vapour deposition. Room temperature photoluminescence (PL) spectra from these quaternary alloys show strong band-to-band emission with equally intense yellow luminescence (YL). Simultaneous measurements of the PL intensity and topography using ultraviolet–visible near field scanning optical microscopy show that the enhanced YL intensity originates from the V pits whereas the intensity of the band edge PL decreases in the vicinity of pits. The strong YL emission can be related to the defect clusters associated with impurity decoration at dislocation lines and sidewalls of the pits. A higher degree of Al incorporation at partially filled V pits leads to the multiple near band edge PL peaks.
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Temperature dependence of the energy gap in semiconductors
Y. P. Varshni · Physica · 1967 · 5.3K citations