Studies on incorporation of As2 and As4 in III–V compound semiconductors with two group V elements grown by molecular beam epitaxy

Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique

C. T. Foxon, B.A. Joyce · Surface Science · 1975 · 396 citations

Natural Sciences, Materials Engineering, Materials Science +14

Calculation of ternary and quaternary III–V phase diagrams

G. B. Stringfellow · Journal of Crystal Growth · 1974 · 375 citations

Natural Sciences, Chemistry, Materials Science +10

Crystal growth '78

I.J. Saunders · Physics Bulletin · 1979 · 369 citations

Natural Sciences, Materials Engineering, Materials Science +9

Calculation of ternary and quaternary III–V phase diagrams

G. B. Stringfellow · Journal of Crystal Growth · 1974 · 279 citations

Natural Sciences, Chemistry, Materials Science +10

Magnesium- and calcium-doping behavior in molecular-beam epitaxial III-V compounds

C. E. C. Wood, D. DeSimone, K.E. Singer et al. · Journal of Applied Physics · 1982 · 149 citations

Engineering, Materials Engineering, Materials Science +17