The effect of V:III ratio on the growth of InN nanostructures by molecular beam epitaxy

A crystallographic model of (00⋅1) aluminum nitride epitaxial thin film growth on (00⋅1) sapphire substrate

C. J. Sun, Patrick Kung, A. Saxler et al. · Journal of Applied Physics · 1994 · 102 citations

Natural Sciences, Materials Engineering, Materials Science +17

GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range

B. Damilano, N. Grandjean, J. Massies et al. · Applied Surface Science · 2000 · 26 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +15

Growth and Optical Characterization of InGaN Quantum Dots Resulting from a 2D–3D Transition

Christoph Adelmann, Julia Simon, N. T. Pelekanos et al. · physica status solidi (a) · 1999 · 19 citations

Natural Sciences, Materials Science, Physics +17