Cadmium Selenide Thin Film Field Effect Transistors

Abstract

All thin film, insulated gate, field effect transistors (triodes) have been formed by standard vacuum deposition techniques. Comparison of the elec-trical parameters of devices formed with CdS, CdSe, or CdTe semiconductor layers indicated certain advantages, namely, higher mobil ity and better sta-bility, of the CdSe units. Stability and life of CdSe devices was improved by use of aluminum rather than gold for the gate electrode. A prel iminary investi-gation of the use of various materials for use as the dielectric layer indicates many compounds are suitable. The transverse field effect phenomenon appears to be for amplifying thin film devices the most immedi-ately util izable of various suggested phenomena. The typical structure consists of two electrodes contacting a semiconductor with a third electrode being separated by a dielectric. Disclosures of field effect devices by