Evaluation of dark-current nonuniformity in a charge-coupled device

Abstract

This letter investigates the relationship between stacking faults (SF’s) and dark-current nonuniformity in a charge-coupled device (CCD) through the measurements of cell-to-cell dark-current distribution, leakage current, C-t characteristics, and the Sirtl etching of the device. It is revealed that stacking faults are strongly connected with the nonuniformity in the dark current and are the dominant origin of the dark-current spikes.