25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV

Abstract

Increasing demand for higher-bandwidth DRAM drive TSV technology development. With the capacity of fine-pitch wide I/O [1], DRAM can be directly integrated on the interposer or host chip and communicate with the memory controller. However, there are many limitations, such as reliability and testability, in developing the technology. It is advantageous to adopt a logic-interface chip between the interposer and stacked-DRAM with thousands of TSV. The logic interface chip in the base level of high-bandwidth memory (HBM) decreases the C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">IO</inf> , repairs the chip-to-chip connection failure, and supports better testability and improves reliability.