Selective deposition of aluminum from selectively excited metalorganic source by the rf plasma

Abstract

A selective method of depositing aluminum onto silicon was developed using trimethylaluminum and hydrogen as source gases. Trimethylaluminum was selectively decomposed into excited species through the well controlled radio frequency (13.56 MHz) excited hydrogen plasma of 0.03–0.06 W/cm3. Excited species were reacted on the silicon surface to produce aluminum without carbon incorporation at 230–260 °C. The thermally oxidized silicon dioxide line and space pattern and contact windows were successfully filled with selectively deposited 3000-Å-thick aluminum.