High-Mobility and High-Stability a-Si:H Thin Film Transistors with Smooth SiN_x/a-Si Interface

Abstract

Through use of an atomic force microscope (AFM), surface morphologies for SiN x and a-Si:H films were investigated. By controlling deposition conditions, very smooth films have been obtained. The thin film transistor (TFT) with smooth a-Si:H on smooth SiN x has both high mobility (1.0 cm 2 ·V -1 ·s -1 ) and high stability at the same time. This high-performance TFT will make an important impact in application to high-pixel-density liquid crystal displays (LCDs), such as for use in workstations and high-definition television (HDTV).