IEEE Journal of Solid-State Circuits · 2004 · 21 citations · 15 references
EngineeringElectrical EngineeringElectronic MaterialsOptoelectronicsPhotonicsDetector TechnologyOptical AmplifiersOptical Communication SystemsOptical DetectorsPhotodetectorsPhotonic Integrated CircuitsDynamic RangeHigh-speed PhotodetectionIntegrated PhotodetectorsPhotodetector BandwidthPhotodiode CircuitsSensitivityTransimpedance Amplifier DesignTransimpedance Amplifiers
We developed a photoreceiver module for over 40 Gb/s that uses two ultrahigh- speed device technologies: an InP HEMT transimpedance amplifier (TIA) and a uni-traveling-carrier photodiode (UTC-PD). The TIA was designed to have a wide dynamic range by using cascade HEMT topology for the output buffer. We found that reducing the standing wave at the PD-TIA interface by decreasing the change of arg(S/sub 11/) of the TIA within the required frequency region is important for increasing the bandwidth of the module. We obtained a minimum sensitivity of -7.6 dBm and a dynamic range of 11 dB for 43-Gb/s nonreturn-to-zero optical input signal. Error-free operation of the module was confirmed at a data rate of 50 Gb/s.
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Uni-Traveling-Carrier Photodiodes
Tadao Ishibashi, Nobutaka Shimizu, Satoshi Kodama et al. · 1997 · 344 citations
InP/InGaAs Uni-Traveling-Carrier Photodiodes
Tadao Ishibashi, Tomofumi Furuta, Hiroshi Fushimi et al. · 2000 · 157 citations