Japanese Journal of Applied Physics · 1991 · 153 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceMicroelectronicsSemiconductor MaterialsThin FilmsGrain GrowthSemiconductor Device MaterialsSemiconductor Thin FilmsSilicon MaterialsThin Film AnnealingThin-film TransistorsGrain Size ImprovementLaser AnnealingNumerical Device SimulationNumerical SimulationPolycrystalline SiliconPolycrystalline Silicon Thin-film TransistorsPolycrystalline Thin FilmsSilicon Thin Films
By both numerical simulation and experimental investigation, we found it possible to enlarge the grain size (∼3000 Å) of polycrystalline silicon (poly-Si) films by excimer laser annealing, using a new method to control the solidification process of molten Si - low-temperature (≦400°C) substrate heating during laser annealing. Poly-Si thin-film transistors (TFTs) fabricated by this new excimer laser annealing method showed a high field-effect mobility of 230 cm 2 /V·s, and good uniformity of field-effect mobility (±10%) within the effective laser irradiation area.
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Excimer-laser-induced crystallization of hydrogenated amorphous silicon
K. Winer, G. B. Anderson, S. E. Ready et al. · Applied Physics Letters · 1990 · 54 citations