Surface electronic properties of n‐ and p‐type InGaN alloys

Abstract

Abstract X‐ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n‐ and p‐type c ‐plane In x Ga 1– x N alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In‐rich) to depletion (Ga‐rich) at x ≈ 0.43 for n‐type alloys and a transition from surface inversion to hole depletion at x ≈ 0.59 for p‐type alloys where downward band bending occurs across the composition range. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)