Effects of K3[Fe(CN)6] slurry's pH value and applied potential on tungsten removal rate for chemical–mechanical planarization application

Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects

F. B. Kaufman, Daniel B. Thompson, R. E. Broadie et al. · Journal of The Electrochemical Society · 1991 · 511 citations

Engineering, Materials Engineering, Materials Science +17

Effect of pH on the Anodic Behavior of Tungsten

K. Osseo‐Asare · Journal of The Electrochemical Society · 2002 · 140 citations

Natural Sciences, Chemistry, Materials Science +17

Effect of Particle Size during Tungsten Chemical Mechanical Polishing

M. Bielmann · Electrochemical and Solid-State Letters · 1999 · 135 citations

Engineering, Materials Engineering, Materials Science +14

In Situ Electrochemical Investigation of Tungsten Electrochemical Behavior during Chemical Mechanical Polishing

David J. Stein, Dale L. Hetherington, T.R. Guilinger et al. · Journal of The Electrochemical Society · 1998 · 83 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrochemical Measurements during the Chemical Mechanical Polishing of Tungsten Thin Films

E. A. Kneer, Varughese Mathew, S. Raghavan et al. · Journal of The Electrochemical Society · 1997 · 69 citations

Natural Sciences, Materials Engineering, Materials Science +17