Recoil implantation of radioactive transition metals and their investigation in silicon by deep-level transient spectroscopy

Abstract

Radioactive isotopes are produced by nuclear reactions in a thin target foil. The recoiling products are directly implanted into samples mounted off-axis to the primary beam. Using proton or α beams and appropriate target foils, radioactive isotopes of Ti, V, Cr, Mn, and Co were implanted. The implantation parameters are presented and compared with other implantation techniques for radioactive isotopes. To demonstrate an application, a deep-level transient spectroscopy measurement on 48V in silicon is presented. Ti and V correlated band-gap levels were observed during the 48V decay.