W. Witthuhn

Temperature dependence of the electric field gradient in noncubic metals

J. Christiansen, P. Heubes, R. Keitel et al. · The European Physical Journal B · 1976 · 224 citations

Natural Sciences, Materials Engineering, Materials Science +13

Band-gap states of Ti, V, and Cr in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>-SiC: Identification and characterization by elemental transmutation of radioactive isotopes

N. Achtziger, W. Witthuhn · Physical review. B, Condensed matter · 1998 · 63 citations

Natural Sciences, Materials Science, Physics +17

Band gap states of Ti, V, and Cr in 4H–silicon carbide

N. Achtziger, W. Witthuhn · Applied Physics Letters · 1997 · 61 citations

Natural Sciences, Materials Science, Physics +16

Acceptors and Donors in the Wide-Gap Semiconductors ZnO and SnO&lt;sub&gt;2&lt;/sub&gt;

H. Wolf, S. Deubler, Doris Forkel‐Wirth et al. · Materials science forum · 1986 · 50 citations · Full text

Natural Sciences, Materials Science, Physics +12

Hydrogen passivation of silicon carbide by low-energy ion implantation

N. Achtziger, J. Grillenberger, W. Witthuhn et al. · Applied Physics Letters · 1998 · 50 citations

Engineering, Materials Engineering, Materials Science +17