N. Achtziger

Band-gap states of Ti, V, and Cr in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>-SiC: Identification and characterization by elemental transmutation of radioactive isotopes

N. Achtziger, W. Witthuhn · Physical review. B, Condensed matter · 1998 · 63 citations

Natural Sciences, Materials Science, Physics +17

Band gap states of Ti, V, and Cr in 4H–silicon carbide

N. Achtziger, W. Witthuhn · Applied Physics Letters · 1997 · 61 citations

Natural Sciences, Materials Science, Physics +16

Hydrogen passivation of silicon carbide by low-energy ion implantation

N. Achtziger, J. Grillenberger, W. Witthuhn et al. · Applied Physics Letters · 1998 · 50 citations

Engineering, Materials Engineering, Materials Science +17

Perturbed-angular-correlation spectroscopy of the fluctuating hyperfine interaction at Cd-donor pairs in silicon: An approach to electronic transitions at impurities in semiconductors

N. Achtziger, W. Witthuhn · Physical review. B, Condensed matter · 1993 · 37 citations

Natural Sciences, Physics, Atomic Physics +12

Recoil implantation of radioactive transition metals and their investigation in silicon by deep-level transient spectroscopy

N. Achtziger, H. Gottschalk, T. Licht et al. · Applied Physics Letters · 1995 · 25 citations

Natural Sciences, Nuclear Engineering, Physics +12