Single-phase growth studies of GaP on Si by solid-source molecular beam epitaxy

Abstract

GaP/Si heterostructures were grown under different growth conditions by molecular beam epitaxy in order to obtain single-phase GaP on Si. The growth results were examined by reflective high-energy electron diffraction, anisotropic etching, atomic force microscopy, and x-ray diffraction. The results showed that high quality, single-phase GaP was grown on Si at a high growth temperature, about 500 °C, with a low P/Ga flux ratio of 2.5×, while at a lower temperature, a second phase with a 90° in-plane rotation was grown.