Optics Express · 2005 · 12 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationOptical Properties Of SemiconductorsOptical SpectroscopyOptoelectronic DevicesSemiconductor Device MaterialsSemiconductor PhysicsElectron MobilityHeterojunction Bipolar TransistorsHigh-electron-mobility TransistorsOptical CharacterizationPhotoluminescencePhotoluminescence SpectroscopySemiconductor CharacterizationSemiconductor Device Characterization
We present a practical experimental design for performing photoluminescence (PL) and photoreflectance (PR) measurements of semiconductors with only one PL spectroscopic system. The measurement setup is more cost efficient than typical PL-plus-PR systems. The design of the experimental setup of the PL-PR system is described in detail. Measurements of two actual device structures, a high-electron-mobility transistor (HEMT) and a double heterojunction-bipolar transistor (DHBT), are carried out by using this design. The experimental PL and PR spectra of the HEMT device, as well as polarized-photoreflectance (PPR) spectra of the DHBT structure, are analyzed in detailed and discussed. The experimental analyses demonstrate the well-behaved performance of this PL-PR design.