Physical Review Letters · 1985 · 119 citations · 7 references
EngineeringPhysicsCondensed Matter PhysicsInterface ScienceSemiconductor MaterialsCarrier TransportElectronic Transport ModelingSemiconductor InterfacesSemiconductor PhysicsCarrier DynamicsCarrier RelaxationCarrier Relaxation DynamicsCarrier Transport In SemiconductorsCharge Transfer At Semiconductor InterfacesRelaxation ProcessesTransport In Semiconductors
Photoinduced excess charge at a GaAs interface barrier relaxes nonexponentially. A fit to experiment with a statistically motivated Kohlrausch formula is possible but unjustified. Serial relaxation by hierarchies of systems with increasing spatial separation of carriers furnishes a convincing explanation and exemplifies recent theoretical proposals to describe nonexponential relaxation processes.
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The ‘universal’ dielectric response
A.K. Jonscher · Nature · 1977 · 5.5K citations
Models of Hierarchically Constrained Dynamics for Glassy Relaxation
R. G. Palmer, D. L. Stein, Elihu Abrahams et al. · Physical Review Letters · 1984 · 1.5K citations
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