Microwave-radiation-induced structural transformations in homo- and heterogeneous GaAs-based systems

Abstract

The effect of microwave irradiation (f = 2.45 GHz, 1.5 W/cm2, t = 1 or 2 min) on the reflectance and photoluminescence spectra of the epitaxial n-n +-GaAs and Au-n-n +-GaAs structures is studied. Short-term microwave irradiation is shown to cause long-term nonmonotonic changes in the spectral characteristics, which can result from the structure modification of the near-surface regions in the epitaxial films. The long-term changes of the optical spectra of the structures that occur after microwave irradiation are explained.