Spatial quantization in GaAs–AlGaAs multiple quantum dots

Abstract

We present results of the fabrication and investigation of totally spatially localized crystalline structures. Low temperature photoluminescence exhibits structure that is best explained by a bottleneck for hole energy loss. This bottleneck is believed to be a direct consequence of the modification of the band structure by the fabrication-imposed potential and is believed to be the first evidence for total spatial quantization in a fabricated heterojunction system.