Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and <i>β</i>-Ga2O3 (2¯01)

Abstract

The energy band alignment between atomic layer deposited (ALD) SiO2 and β-Ga2O3 (2¯01) is calculated using x-ray photoelectron spectroscopy and electrical measurement of metal-oxide semiconductor capacitor structures. The valence band offset between SiO2 and Ga2O3 is found to be 0.43 eV. The bandgap of ALD SiO2 was determined to be 8.6 eV, which gives a large conduction band offset of 3.63 eV between SiO2 and Ga2O3. The large conduction band offset makes SiO2 an attractive gate dielectric for power devices.