Japanese Journal of Applied Physics · 1984 · 43 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingIii-v SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsElectron MobilityEpitaxial MaterialsMetalorganic Vapor Phase EpitaxyN-type ConductivityP-type ConductivityResistivitySemiconductor Characterization
Undoped ZnSe epitaxial layers have been grown at a temperature as low as 250°C onto (100)GaAs substrates by a low-temperature and low-pressure organometallic vapor-phase epitaxial (OMVPE) technique using dimethylzinc (DMZ) and H 2 Se as source materials. The epilayers have exhibited strong blue emission and low resistive n-type conductivity. Typical values of the electron concentration n , the resistivity p , and the electron Hall mobility µ are n =8.2×10 16 cm -3 , p =0.31 Ω·cm, and µ=244 cm 2 /V·s, respectively.
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