Journal of Applied Physics · 1983 · 87 citations · 16 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsSemiconductor MaterialsThin FilmsCompound SemiconductorsEpitaxial GrowthIi-vi SemiconductorsSemiconductor PhysicsSemiconductor Thin FilmsThin-film MaterialsAngle-resolved Photoemission SpectroscopyAtomic Layer EpitaxyElectronic Density Of StatesElectronic Structure AnalysisEpitaxial Film GrowthEpitaxial Thin-film GrowthValence BandWork Function
It is shown that growth of homoepitaxial CdTe films on CdTe (110) substrates by the atomic layer epitaxy method can lead to high structural perfection. The electronic structure of these films with the thickness of approximately 100 Å was studied at room temperature by means of angle-resolved photoemission. In addition to several bulklike features observed in the spectra an intrinsic surface state is believed to be found at the energy of 0.33 eV below the valence-band maximum for the first time in epitaxially grown II-VI compound semiconductor films. The work function of the films was found to be 5.75 eV±0.05 eV independent of whether the growth was terminated by a Cd pulse or Te2 pulse.
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