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Superpolishing for Planarizing Copper Damascene Interconnects
32
Citations
6
References
2003
Year
EngineeringElectrode-electrolyte InterfaceChemistryInterconnect (Integrated Circuits)Polyethylene GlycolAcid AdditivesChemical EngineeringAdvanced Packaging (Semiconductors)Electronic PackagingSuperpolishing ElectrolyteMaterials Science3D Ic ArchitectureSurface ElectrochemistryElectrochemical ProcessMicroelectronicsElectrochemistrySurface ScienceFundamental ElectrochemistryCopper Damascene InterconnectsElectrochemical Surface Science
We demonstrate a superpolishing electrolyte, which consists of acid additives in conventional Cu polishing electrolytes for efficiently planarizing Cu damascene features. The significant additive concentration gradient in features, resulting in a selective Cu dissolution rate within features, is explored as a major mechanism that yields such electrolytes with high planarization efficiency. Moreover, another additive, polyethylene glycol as a suppressor, is also employed to reduce oxygen bubbling on polished films. Consequently, a smooth surface with a complete step height elimination is obtained in a 70 μm trench after electropolishing. © 2003 The Electrochemical Society. All rights reserved.
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