Self Size-Limiting Process of InAs Quantum Dots Grown by Molecular Beam Epitaxy

Abstract

In the molecular beam epitaxy (MBE) growth of InAs quantum dots (QDs), we investigated the dot formation via the self size-limiting process. Accumulation of size-limited InAs QDs resulted in narrow inhomogeneous broadening of photoluminescence (PL) linewidth and low energy shift of PL peak position. Atomic force microscopy (AFM) and reflection high-energy electron-beam diffraction (RHEED) observations revealed the appearance of {136} facets on the side wall of size-limited InAs dots. It was proposed that the facet formation played an important role in the self size-limiting behavior.