Electronics and Communications in Japan · 2015 · 152 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor DevicesCrystal EngineeringDislocations In SemiconductorsLight-emitting DiodesLuminescent MaterialsSemiconductor Crystal GrowthSemiconductor Device MaterialsAir PurificationDislocation DensityExternal Quantum EfficiencyLight-emitting DevicesPower OutputPurificationQuantum EfficiencyUltraviolet Light-emitting Diodes
SUMMARY Deep‐ultraviolet (DUV) light‐emitting diodes (LEDs) are in demand for a wide variety of potential applications, such as sterilization, water and air purification, medical uses, and so on. We have demonstrated 222–351 nm AlGaN and quaternary InAlGaN‐based DUV‐LEDs by developing a low threading dislocation density (TDD) AlN crystal. We achieved an external quantum efficiency (EQE) of about 4% and an output power greater than 30 mW in DUV‐LEDs for use in sterilization applications by developing new crystal growth techniques.
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