Proceedings of the IEEE · 1967 · 13 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMetallic MaterialsSemiconductor DevicesImplant MaterialsImplant TechnologyIon ImplantationMetal-semiconductor ContactsMetalsNanoelectronicsGallium ArsenideGallium Arsenide Crystal GrowthHigh-intensity Electron Beams
A technique is described for producing high-energy beams of metallic ions. The application of this technique to microcircuit manufacture is demonstrated by implanting zinc to prepare a p-n junction in gallium arsenide.
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Properties of Ionic Bombarded Silicon
R. S. Ohl · Bell System Technical Journal · 1952 · 79 citations