Photoelectric Properties of Ionically Bombarded Silicon

Abstract

In the course of investigation of the rectifying properties of silicon very interesting photoelectric properties were found. The first photo-cells were cut from hulk silicon in which a natural potential barrier was found. A typical spectral characteristic of such a cell is shown. This early work was followed by the discovery of the ionic bombardment method of producing photo active silicon surfaces. The effects of the temperature of the target and of the energy of the bombarding particles in the photoelectric properties is illustrated by characteristic curves. Relative equi-energy spectral response characteristics as a function of wavelength are illustrated. The photon efficiency as a function of wavelength of a typical cell is shown.