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Electrical and radiation characterization of three SOI material technologies
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1987
Year
EngineeringDevice IntegrationSilicon On InsulatorInterconnect (Integrated Circuits)Advanced Packaging (Semiconductors)Radiation CharacterizationElectronic PackagingMaterials ScienceMaterials EngineeringElectrical EngineeringDielectric IsolationMaterial QualityMicroelectronicsElectrical PropertyMicrofabricationCharacterization StudyApplied PhysicsMaterial PerformanceElectrical Insulation
The authors describe a characterization study of three SOI (silicon-on-insulator) material approaches in development: SIMOX (Separation by IMplanted Oxidation), scaled dielectric isolation, and wafer bonding. The current status of material quality is reviewed, typical CMOS electrical- and radiation-response characteristics are presented, and the viability of the three technologies is assessed.